New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements
Identifieur interne : 000196 ( Russie/Analysis ); précédent : 000195; suivant : 000197New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements
Auteurs : RBID : Pascal:08-0462842Descripteurs français
- Pascal (Inist)
- Interface, Hétérojonction, Cellule solaire, Diffusion(transport), Mesure capacité électrique, Capacité électrique, Propriété interface, Densité défaut, Discontinuité bande, Hétérointerface, Matériau amorphe hydrogéné, Silicium, Phosphure de gallium, Phosphure d'indium, a-C:H, a-Si:H, Si, GaInP, 8460J, 6835F, 6855L.
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Abstract
The capabilities of the new method based on the measurement of the diffusion capacitance are explored for the interface characterization of both anisotype and isotype heterojunctions. The influence of interface properties such as interface defect density and band discontinuities on diffusion capacitance is demonstrated. The value of the diffusion capacitance is shown to decrease upon interface defect recombination, whatever the type of the heterointerface (isotype or anisotype). Illustrations are given on two different types of high efficiency heterojunction solar cells, namely a-Si:H/c-Si and AlInP/GaInP solar cells.
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Kaluzhniy</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F. Ioffe Physico-technical Institute, Polytechnicheskaya str. 26</s1><s2>194021 St.-Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St.-Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Lantratov, V M" uniqKey="Lantratov V">V. M. Lantratov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F. Ioffe Physico-technical Institute, Polytechnicheskaya str. 26</s1><s2>194021 St.-Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St.-Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Mintairov, S A" uniqKey="Mintairov S">S. A. Mintairov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F. Ioffe Physico-technical Institute, Polytechnicheskaya str. 26</s1><s2>194021 St.-Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St.-Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Damon Lacoste, J" uniqKey="Damon Lacoste J">J. Damon-Lacoste</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>LPICM, Ecole Polytechnique, CNRS</s1><s2>91128 Palaiseau</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author><author><name sortKey="Eon, D" uniqKey="Eon D">D. Eon</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>LPICM, Ecole Polytechnique, CNRS</s1><s2>91128 Palaiseau</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author><author><name sortKey="Roca I Cabarrocas, P" uniqKey="Roca I Cabarrocas P">P. Roca I Cabarrocas</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>LPICM, Ecole Polytechnique, CNRS</s1><s2>91128 Palaiseau</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author><author><name sortKey="Ribeyron, P J" uniqKey="Ribeyron P">P.-J. Ribeyron</name><affiliation wicri:level="3"><inist:fA14 i1="05"><s1>INES-CEA, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0462842</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0462842 INIST</idno><idno type="RBID">Pascal:08-0462842</idno><idno type="wicri:Area/Main/Corpus">006254</idno><idno type="wicri:Area/Main/Repository">006193</idno><idno type="wicri:Area/Russie/Extraction">000196</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous hydrogenated material</term><term>Band offset</term><term>Capacitance</term><term>Capacitance measurement</term><term>Defect density</term><term>Diffusion</term><term>Gallium phosphide</term><term>Heterointerface</term><term>Heterojunction</term><term>Indium phosphide</term><term>Interface</term><term>Interface properties</term><term>Silicon</term><term>Solar cell</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Interface</term><term>Hétérojonction</term><term>Cellule solaire</term><term>Diffusion(transport)</term><term>Mesure capacité électrique</term><term>Capacité électrique</term><term>Propriété interface</term><term>Densité défaut</term><term>Discontinuité bande</term><term>Hétérointerface</term><term>Matériau amorphe hydrogéné</term><term>Silicium</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>a-C:H</term><term>a-Si:H</term><term>Si</term><term>GaInP</term><term>8460J</term><term>6835F</term><term>6855L</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The capabilities of the new method based on the measurement of the diffusion capacitance are explored for the interface characterization of both anisotype and isotype heterojunctions. The influence of interface properties such as interface defect density and band discontinuities on diffusion capacitance is demonstrated. The value of the diffusion capacitance is shown to decrease upon interface defect recombination, whatever the type of the heterointerface (isotype or anisotype). Illustrations are given on two different types of high efficiency heterojunction solar cells, namely a-Si:H/c-Si and AlInP/GaInP solar cells.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>516</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements</s1></fA08><fA09 i1="01" i2="1" l="FRE"><s1>Proceedings on Advanced Materials and Concepts for Photovoltaics EMRS 2007 Conference, Strasbourg, France</s1></fA09><fA11 i1="01" i2="1"><s1>GUDOVSKIKH (A. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHOUFFOT (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>KLEIDER (J. P.)</s1></fA11><fA11 i1="04" i2="1"><s1>KALUZHNIY (N. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>LANTRATOV (V. M.)</s1></fA11><fA11 i1="06" i2="1"><s1>MINTAIROV (S. 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Ioffe Physico-technical Institute, Polytechnicheskaya str. 26</s1><s2>194021 St.-Petersburg</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>LPICM, Ecole Polytechnique, CNRS</s1><s2>91128 Palaiseau</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="05"><s1>INES-CEA, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>10 aut.</sZ></fA14><fA15 i1="01"><s1>Konarka Austria GmbH</s1><s3>AUT</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>JRC-European Commission</s1><s3>ITA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>ECN</s1><s3>NLD</s3><sZ>3 aut.</sZ></fA15><fA15 i1="04"><s1>InESS-CNRS</s1><s2>Strasbourg</s2><s3>FRA</s3><sZ>4 aut.</sZ></fA15><fA20><s1>6786-6790</s1></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000197684730140</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0462842</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>The capabilities of the new method based on the measurement of the diffusion capacitance are explored for the interface characterization of both anisotype and isotype heterojunctions. The influence of interface properties such as interface defect density and band discontinuities on diffusion capacitance is demonstrated. The value of the diffusion capacitance is shown to decrease upon interface defect recombination, whatever the type of the heterointerface (isotype or anisotype). 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